npn bcy58 ? bcy59 comset semiconductors 1/4 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s the bcy58 and bcy59 are npn transistors mounted in to-18 metal package with the collector connected to the case . they are designed for use in audio drive and low-noise input stages. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage(1) bcy59 45 v bcy58 32 v ces collector-emitter voltage (v be =0) bcy59 45 v bcy58 32 v ebo emitter-base voltage bcy59 7 v bcy58 7 i c collector current bcy59 200 ma bcy58 i b base current bcy59 50 ma bcy58 p d total power dissipation @ t amb = 45 bcy59 0.39 mw bcy58 p d total power dissipation @ t case = 45 bcy59 1 watts bcy58 t j junction temperature bcy59 200 c bcy58 t stg storage temperature range bcy59 -65 to +150 c bcy58 (1) applicable up to i c = 500ma thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 450 c/w r thj-c thermal resistance, junction to ambient in free air 150 c/w
npn bcy58 ? bcy59 18/10/2012 comset semiconductors 2/4 electrical characteristics tj=25c unless otherwise specifie symbol ratings test condition(s) min typ max unit i ces collector cutoff current v cb =45 v v be =0v bcy59 - - 10 na v cb =32 v v b =0v bcy58 i ces collector cutoff current v cb =45 v v be =0v,t amb =150c bcy59 - - 10 a v cb =32 v, v be =0 t amb =150c bcy58 i ebo emitter cutoff current v be =5.0 vi c =0 bcy59 - - 10 na bcy58 v ceo collector emitter breakdown voltage i c =2 ma, i b =0 bcy59 45 - - v bcy58 32 - - v ebo emitter base breakdown voltage i e =1a, i c =0 bcy59 7 - - v bcy58 v ce(sat) collector-emitter saturation voltage i c =10 ma i b =0.25 ma bcy59 - 0.12 0.25 v bcy58 i c =100 ma i b =2.5 ma bcy59 - 04 08 bcy58 v be(sat) base-emitter saturation voltage i c =10 ma i b =0.25 ma bcy59 0.6 0.7 0.85 bcy58 i c =100 ma i b =2.5 ma bcy59 0.7 0.85 1.2 bcy58 v be base-emitter voltage i c =10 a, v ce =5 v bcy59 - 0.5 - v bcy58 v ce =v ce max i c =20 a, t j =100c bcy59 0.2 - - bcy58 i c =2 ma, v ce =5 v bcy59 0.55 - 0.7 bcy58 i c =10 ma, v ce =1 v bcy59 - 0.7 - bcy58 i c =100 ma, v ce =1 v bcy59 - 0.76 - bcy58 symbol ratings test condition(s) bcy59vii bcy59viii bcy59ix bcy59x bcy58vii bcy58viii bcy58ix bcy58x h fe dc current gain i c =10 a, v ce =5 v - >20 >40 >60 typ.20 typ.95 typ.190 typ.300 i c =10 a, v ce =5 v >120 >180 >250 >380 <220 <310 <460 <630 i c =10 ma, v ce =1 v >80 >120 >160 >240 - <400 <630 <1000 i c =100 ma, v ce =1v >40 >45 >60 >60 h fe small-signal current gain i c =2 ma, v ce =5 v, f = 1khz >125 >175 >250 >350 <250 <350 <500 <700
npn bcy58 ? bcy59 18/10/2012 comset semiconductors 3/4 electrical characteristics tj=25c unless otherwise specifie symbol ratings test condition(s) min typ mx unit f t transition frequency i c =10 ma, v ce =5 v f = 100mhz bcy59 150 - - mhz bcy58 f noise figure , rs=2k ? i c =200 a, v ce =5 v f = 1khz, b =200hz bcy59 - 2 6 db bcy58 t d delay time i c =10 ma , i b =1 ma -i bm =1 ma, v bb =3.6 v r1= r2 = 5k ? r l = 990 ? bcy59 - 35 - ns bcy58 t r rise time bcy59 - 50 - bcy58 t on turn on time bcy59 - 85 150 bcy58 t s storage time bcy59 - 400 - bcy58 t f fall time bcy59 - 80 - bcy58 t off turn off time bcy59 - 480 800 bcy58 t d delay time i c =100 ma , i b =10 ma -i bm =10 ma, v bb =5 v r1 = 500 ? , r1 = 700 ? r l = 990 ? bcy59 - 5 - ns bcy58 t r rise time bcy59 - 50 - bcy58 t on turn on time bcy59 - 55 150 bcy58 t s storage time bcy59 - 250 - bcy58 t f fall time bcy59 - 200 - bcy58 t off turn off time bcy59 - 450 800 bcy58 c c collector capacitance i e = i e = 0 ,v cb =10 v f = 1mhz bcy59 - - 5 pf bcy58 c e emitter capacitance i c = i c = 0 ,v eb =0.5 v f = 1mhz bcy59 - - 15 pf bcy58
npn bcy58 ? bcy59 18/10/2012 comset semiconductors 4/4 mechanical data case to-18 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
|
